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所有笔记半导体器件原理 2.7 Mobility Degradation and Carrier Velocity Saturation
2025 年 11 月 25 日
About mobility degradation in MOSFETs, and the carrier velocity saturation model.
半导体器件原理 2.6 Subthreshold Region Current and Effect of Body Bias
2025 年 11 月 24 日
About the subthreshold behaviors of MOSFETs, the turn-on characteristics, comparison between MOSFETs and BJTs, and the effect of body bias and substrate depletion charge on MOSFET I-V characteristics.
半导体器件原理 2.5 Classical MOSFET Turn-on Current
2025 年 11 月 24 日
About how to calculate the current of a MOSFET when it is turned on, based on the classical pinchoff model, the channel length modulation effect, and some discussions about the inconsistencies and limitations of the model.