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所有笔记半导体器件原理 2.12 Advanced Nano-CMOS Technologies
2025 年 12 月 8 日
About more advanced nano-CMOS device structures, including silicon-on-insulator MOSFETs, double-gate and multi-gate MOSFETs, tunneling MOSFETs, junctionless transistors, and 2D material based transistors.
半导体器件原理 2.11 Features in Modern MOSFET Structures
2025 年 12 月 7 日
About modern MOSFET design, including source / drain extensions, high-k gate dielectric, metal gate technology, source / drain and channel engineering, and strain engineering.
半导体器件原理 2.10 Short Channel MOSFET
2025 年 12 月 7 日
About the challenges and solutions with short channel MOSFET design, including threshold voltage scaling, source / drain charge sharing, drain induced barrier lowering and punchthrough.