2025
12
半导体器件原理 2.12 Advanced Nano-CMOS Technologies
About more advanced nano-CMOS device structures, including silicon-on-insulator MOSFETs, double-gate and multi-gate MOSFETs, tunneling MOSFETs, junctionless transistors, and 2D material based transistors.
半导体器件原理 2.11 Features in Modern MOSFET Structures
About modern MOSFET design, including source / drain extensions, high-k gate dielectric, metal gate technology, source / drain and channel engineering, and strain engineering.
半导体器件原理 2.10 Short Channel MOSFET
About the challenges and solutions with short channel MOSFET design, including threshold voltage scaling, source / drain charge sharing, drain induced barrier lowering and punchthrough.
半导体器件原理 2.9 Transistor Scaling
About the scaling of MOSFETs, including Moore’s law, scaling rules, ITRS, economic considerations, scaling limits, and effects of scaling on parasitics.
半导体器件原理 2.8 I-V Characteristics With Carrier Velocity Saturation Model
About the comparisons between the pinchoff model and the carrier velocity saturation model for MOSFET I-V characteristics, with varying channel length, gate voltage, and gate oxide thickness.
2025
11
半导体器件原理 2.7 Mobility Degradation and Carrier Velocity Saturation
About mobility degradation in MOSFETs, and the carrier velocity saturation model.
半导体器件原理 2.6 Subthreshold Region Current and Effect of Body Bias
About the subthreshold behaviors of MOSFETs, the turn-on characteristics, comparison between MOSFETs and BJTs, and the effect of body bias and substrate depletion charge on MOSFET I-V characteristics.
半导体器件原理 2.5 Classical MOSFET Turn-on Current
About how to calculate the current of a MOSFET when it is turned on, based on the classical pinchoff model, the channel length modulation effect, and some discussions about the inconsistencies and limitations of the model.
半导体器件原理 2.4 MOS Capacitor With a Source
About CMOS technology, MOS capacitor with a source and its capacitance characteristics, and body effect.
半导体器件原理 2.3 Charge Coupled Device (CCD) and CMOS Active Pixel Sensors
About charge coupled devices (CCDs), including its operation principle, architecture, design considerations, performance, and comparison with CMOS active pixel sensors (APS).
半导体器件原理 2.2 Calculating MOS Capacitor Charge and Capacitance
About charge and capacitance calculation in an MOS capacitor under accumulation, depletion, and inversion modes, and the dynamic capacitance behavior in inversion mode.
半导体器件原理 2.1 MOS Capacitor Charge Distribution
About the structure of MOSFET, MOS capacitor, the charge, electric field and potential distribution in accumulation, depletion and inversion modes.
半导体器件原理 1.14 Bipolar Junction Transistor Models
About modeling BJTs under different operation modes, small signal model for amplifier design, frequency response and structural optimization.
半导体器件原理 1.13 Physical Structure and Switching
About the physical structure of BJTs, and the switching transient behavior.
半导体器件原理 1.12 Non-Ideal Effects in Bipolar Junction Transistor
About the other three operation modes of BJT, and some non-ideal effects, including the Early effect, base punchthrough, and breakdown.
半导体器件原理 1.11 Basic Bipolar Junction Transistor in Forward Active Mode
About the formation of bipolar junction transistors (BJT), their operation principles, and discussions on current components, current-voltage characteristics, and design considerations in the forward active mode.
半导体器件原理 1.10 Metal Semiconductor Contacts
About work function, metal-semiconductor contacts (Schottky contacts and ohmic contacts), derivation of Schottky diode I-V characteristics, and comparison between Schottky diodes and PN junction diodes.
2025
10
半导体器件原理 Summary as of 1.8
Formulas and concepts till 1.8 of the Principle of Semiconductor Devices course. Mainly formulas though.
半导体器件原理 1.9 Optical Property of PN Junctions
About the optical properties of PN junctions, how to apply them to photo detectors, solar cells, and LEDs, and how to design these devices for better performance.
半导体器件原理 1.8 PN Junction Switching and Model
About the charge storage effects, PN junction diode models, and parameter extraction.
半导体器件原理 1.7 Real PN Junction Charateristics
About non-ideal PN junction characteristics, PN junction turn-on, breakdown, temperature effects, and how to design a PN junction.
半导体器件原理 1.6 Carrier Actions in a PN Junction
About how minority and majority carriers move in a PN junction with external voltage applied, and the difference between short and long diodes.
半导体器件原理 1.5 Derivation of the Ideal PN Junction Diode Equation
About carrier statistics with respect to locations, external voltages, and the diffusion current with applied voltage.
半导体器件原理 1.4 PN Junction Formation
About formation of the PN junction, band diagram, depletion region width calculation, one-sided PN junction, and whether we can measure the built-in potential.
2025
09
半导体器件原理 1.3 Effects of Doping
About doping, dopant states, and how to calculate carrier density and locate the Fermi level in doped semiconductors.
半导体器件原理 1.2 Calculating Carrier Concentrations
About density of states, Fermi-Dirac distribution, carrier density calculation, effective density of states, Boltzmann approximation, and water analogy for the bandgap.
半导体器件原理 1.1 From Atom to Band Diagram
About energy band, different materials, carrier motion, and the water analogy.