About mobility degradation in MOSFETs, and the carrier velocity saturation model.
About the subthreshold behaviors of MOSFETs, the turn-on characteristics, comparison between MOSFETs and BJTs, and the effect of body bias and substrate depletion charge on MOSFET I-V characteristics.
About how to calculate the current of a MOSFET when it is turned on, based on the classical pinchoff model, the channel length modulation effect, and some discussions about the inconsistencies and limitations of the model.
About CMOS technology, MOS capacitor with a source and its capacitance characteristics, and body effect.
About charge coupled devices (CCDs), including its operation principle, architecture, design considerations, performance, and comparison with CMOS active pixel sensors (APS).
About charge and capacitance calculation in an MOS capacitor under accumulation, depletion, and inversion modes, and the dynamic capacitance behavior in inversion mode.
About the structure of MOSFET, MOS capacitor, the charge, electric field and potential distribution in accumulation, depletion and inversion modes.
About modeling BJTs under different operation modes, small signal model for amplifier design, frequency response and structural optimization.
About the physical structure of BJTs, and the switching transient behavior.
About the other three operation modes of BJT, and some non-ideal effects, including the Early effect, base punchthrough, and breakdown.
About the formation of bipolar junction transistors (BJT), their operation principles, and discussions on current components, current-voltage characteristics, and design considerations in the forward active mode.
About work function, metal-semiconductor contacts (Schottky contacts and ohmic contacts), derivation of Schottky diode I-V characteristics, and comparison between Schottky diodes and PN junction diodes.
Formulas and concepts till 1.8 of the Principle of Semiconductor Devices course. Mainly formulas though.
About the optical properties of PN junctions, how to apply them to photo detectors, solar cells, and LEDs, and how to design these devices for better performance.
About the charge storage effects, PN junction diode models, and parameter extraction.
About non-ideal PN junction characteristics, PN junction turn-on, breakdown, temperature effects, and how to design a PN junction.
About how minority and majority carriers move in a PN junction with external voltage applied, and the difference between short and long diodes.
About carrier statistics with respect to locations, external voltages, and the diffusion current with applied voltage.
About formation of the PN junction, band diagram, depletion region width calculation, one-sided PN junction, and whether we can measure the built-in potential.
About doping, dopant states, and how to calculate carrier density and locate the Fermi level in doped semiconductors.
About density of states, Fermi-Dirac distribution, carrier density calculation, effective density of states, Boltzmann approximation, and water analogy for the bandgap.
About energy band, different materials, carrier motion, and the water analogy.